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| Type IPD038N06N3 G OptiMOS(R)3 Power-Transistor Features * Excellent gate charge x R DS(on) product (FOM) * Very low on-resistance R DS(on) * N-channel, normal level * for sync. rectification, drives and dc/dc SMPS * Avalanche rated * Very low on-resistance R DS(on) * Qualified according to JEDEC1) for target applications * Pb-free plating; RoHS compliant Type IPD038N06N3 G Product Summary V DS R DS(on),max ID 60 3.8 90 previous engineering sample code: IPD04xN06N V m A Package Marking PG-TO252-3 038N06N Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 C V GS=10 V, T C=100 C Value 90 90 360 90 165 20 Unit A Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Gate source voltage 1) 2) 3) I D,pulse I AS E AS V GS T C=25 C T C=25 C I D=90 A, R GS=25 mJ V J-STD20 and JESD22 See figure 3 for more detailed information See figure 13 for more detailed information Rev.1.02 page 1 2010-08-12 IPD038N06N3 G Maximum ratings, at T j=25 C, unless otherwise specified Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Symbol Conditions P tot T j, T stg T C=25 C Value 188 -55 ... 175 55/175/56 Unit W C Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm cooling area 4) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=90 A V DS=60 V, V GS=0 V, T j=25 C V DS=60 V, V GS=0 V, T j=125 C Gate-source leakage current Drain-source on-state resistance Gate resistance Transconductance 4) - - 0.8 75 50 K/W 60 2 - 3 0.1 4 1 V A - 10 10 3.1 1.3 120 100 100 3.8 nA m S I GSS R DS(on) RG g fs V GS=20 V, V DS=0 V V GS=10 V, I D=90 A |V DS|>2|I D|R DS(on)max, I D=90 A 60 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev.1.02 page 2 2010-08-12 IPD038N06N3 G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 5) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 5) Values typ. max. Unit C iss C oss Crss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=90 A, R G=3.5 V GS=0 V, V DS=30 V, f =1 MHz - 8000 1700 58 30 70 40 5 - pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=90 A, V GS=0 to 10 V - 42 24 9 27 98 5.3 77 - nC V IS I S,pulse V SD t rr Q rr T C=25 C V GS=0 V, I F=90 A, T j=25 C V R=30 V, IF=50A, di F/dt =100 A/s - 0.95 125 110 90 360 1.2 - A V ns nC See figure 16 for gate charge parameter definition Rev.1.02 page 3 2010-08-12 IPD038N06N3 G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS10 V 200 180 160 140 120 100 80 60 P tot [W] 100 80 60 40 20 0 0 50 100 150 200 I D [A] 40 20 0 0 50 100 150 200 T C [C] T C [C] 3 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 103 limited by on-state resistance 10 s 1 s 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 1 0.5 10 2 DC 100 s 0.2 1 ms Z thJC [K/W] I D [A] 101 10 ms 0.1 0.1 0.05 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 0.01 0 0 0 0 0 0 1 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev.1.02 page 4 2010-08-12 IPD038N06N3 G 5 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 200 10 V 8V 7V 6V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 C parameter: V GS 12 160 10 8 R DS(on) [m] 120 I D [A] 5.5 V 5V 6 5.5 V 6V 80 4 5V 7V 8V 10 V 40 2 0 0 0 0 1 2 3 0 0 20 40 60 80 100 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 200 8 Typ. forward transconductance g fs=f(I D); T j=25 C 160 160 120 120 g fs [S] 80 175 C 25 C I D [A] 80 40 40 0 0 2 4 6 8 0 0 20 40 60 80 100 V GS [V] I D [A] Rev.1.02 page 5 2010-08-12 IPD038N06N3 G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=90 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS 8 4 900 A 90 A 6 3 R DS(on) [m] max 4 typ V GS(th) [V] 100 140 180 2 2 1 0 -60 -20 20 60 0 -60 -20 20 60 100 140 180 T j [C] T j [C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 104 10000 1000 Ciss Coss 175C 98% 103 1000 100 25 C C [pF] I F [A] 175 C 25C 98% 102 100 10 Crss 101 10 1 20 40 60 0.0 0.5 1.0 1.5 2.0 0 V DS [V] V SD [V] Rev.1.02 page 6 2010-08-12 IPD038N06N3 G 13 Avalanche characteristics I AS=f(t AV); R GS=25 parameter: T j(start) 100 14 Typ. gate charge V GS=f(Q gate); I D=90 A pulsed parameter: V DD 12 25 C 10 30 V 12 V 100 C 48 V 8 150 C 10 V GS [V] 0.1 1 10 100 1000 I AV [A] 6 4 2 1 0 0 20 40 60 80 100 t AV [s] Q gate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=1 mA 16 Gate charge waveforms 70 V GS Qg 65 V BR(DSS) [V] 60 V g s(th) 55 Q g(th) Q gs -60 -20 20 60 100 140 180 Q sw Q gd Q g ate 50 T j [C] Rev.1.02 page 7 2010-08-12 IPD038N06N3 G PG-TO252-3 (D-Pak) Rev.1.02 page 8 2010-08-12 IPD038N06N3 G Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.1.02 page 9 2010-08-12 |
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